Semiconductor device and light-emitting device

摘要

One feature of a semiconductor device of the present invention is to include an electrode that serves as an electrode of a light-emitting element. The electrode includes a first layer and a second layer. Further, end portions of the electrode are covered with a partition layer having an opening portion. Moreover, a part of the electrode is exposed by the opening portion of the partition layer. One feature of a semiconductor device of the present invention is to include an electrode that serves as an electrode of a light-emitting element and a transistor. The electrode and the transistor are connected electrically to each other. The electrode includes a first layer and a second layer. Further, end portions of the electrode are covered with a partition layer having an opening portion. Moreover, the second layer is exposed by the opening portion of the partition layer.

主权项

1. A semiconductor device comprising:
a transistor; a first electrode electrically connected to the transistor and serving as an electrode of a light-emitting element, the first electrode comprising a first layer and a second layer over the first layer; and a partition layer covering an end portion of the first electrode and comprising an opening portion to expose a part of the second layer, wherein the first layer comprises a conductive substance, wherein the second layer comprises an electron transporting substance and a substance showing electron donating property to the electron transporting substance, and wherein the partition layer is in contact with a top surface of the second layer.