Integrated circuit devices including through-silicon via (TSV) contact pads electronically insulated from a substrate

摘要

An integrated circuit device includes a substrate having a plurality of device patterns thereon. A device isolation layer is provided on the substrate, an interlayer dielectric layer is provided on the device isolation layer and the substrate, and a conductive via extends through the interlayer dielectric layer and the device isolation layer and into the substrate. A conductive via contact pad is provided on the interlayer dielectric layer in electrical contact with the conductive via. In plan view, the conductive via contact pad is confined within an area of the interlayer dielectric layer and/or an area of the device isolation layer that electrically insulates the conductive via contact pad from the substrate. Related methods and devices are also discussed.

主权项

1. An integrated circuit device, comprising:
a substrate including a plurality of dummy device patterns in an electrically floating state thereon; a device isolation layer on the substrate; an interlayer dielectric layer on the device isolation layer and the substrate; a conductive via extending through the interlayer dielectric layer and the device isolation layer and into the substrate; and a conductive via contact pad on the conductive via and the interlayer dielectric layer, wherein, in plan view, the conductive via contact pad overlaps with: at least one of the dummy device patterns that is electrically insulated from the substrate by a portion of the device isolation layer extending therebetween; or at least one dummy active region of the substrate that is electrically insulated from the conductive via contact pad by a portion of the interlayer dielectric layer continuously extending therebetween.