Semiconductor device

摘要

Reliability of a semiconductor device is improved by suppressing reverse voltage deterioration at the time of reverse bias junction barrier Schottky diode using a substrate containing SiC. In a JBS diode having an active area of 0.1 cm2 or more, an area of a Schottky interface at which a drift layer and a Schottky electrode are contacted can be sufficiently reduced by relatively increasing a ratio of p-type semiconductor region being a junction barrier region in an active region, and thereby deterioration in reverse voltage caused by defects existing in the drift layer is prevented.

主权项

1. A semiconductor device comprising a Schottky barrier diode, the Schottky barrier diode comprising:
a semiconductor substrate having a first conduction type and containing silicon carbide; a first semiconductor region formed on the semiconductor substrate and having the first conduction type; an active region having an area of 0.1 cm2 or more in the main surface of the first semiconductor region; a plurality of second semiconductor regions formed on the upper surface of the first semiconductor region in the active region and having a second conduction type opposite to the first conduction type; a first electrode connected by Schottky connection to the first semiconductor region in the active region; and a second electrode electrically connected to a back surface of the semiconductor substrate, wherein a multiplication of a density of defects DEP which the first semiconductor region has and an area of the first semiconductor region AS exposed from the second semiconductor regions in the active region satisfies DEP×AS≦223.