Graphite and/or graphene semiconductor devices

摘要

Various embodiments are provided for graphite and/or graphene based semiconductor devices. In one embodiment, a semiconductor device includes a semiconductor layer and a semimetal stack. In another embodiment, the semiconductor device includes a semiconductor layer and a zero gap semiconductor layer. The semimetal stack/zero gap semiconductor layer is formed on the semiconductor layer, which forms a Schottky barrier. In another embodiment, a semiconductor device includes first and second semiconductor layers and a semimetal stack. In another embodiment, a semiconductor device includes first and second semiconductor layers and a zero gap semiconductor layer. The first semiconductor layer includes a first semiconducting material and the second semi conductor layer includes a second semiconducting material formed on the first semiconductor layer. The semimetal stack/zero gap semiconductor layer is formed on the second semiconductor layer, which forms a Schottky barrier.

主权项

1. A Schottky diode comprising:
a semiconductor layer including a semiconducting material; a semimetal stack including a graphene layer, wherein the semimetal stack is formed on the semiconductor layer, and the semiconductor layer and the semimetal stack form a Schottky barrier; and an ohmic contact layer in contact with the semiconductor layer and not in contact with the semimetal stack.