发明名称 Semiconductor device and method of manufacturing the same
摘要 Provided are a semiconductor device and a method of manufacturing the same. The semiconductor device includes: a memory array on a first substrate; and a peripheral circuit on a second substrate, wherein the first substrate and the second substrate may be attached to each other so that the memory array and the peripheral circuit are electrically connected to each other.
申请公布号 US8890228(B2) 申请公布日期 2014.11.18
申请号 US200812292596 申请日期 2008.11.21
申请人 Samsung Electronics Co., Ltd. 发明人 Lee Myoung-jae;Park Young-soo;Lee Chang-bum;Ahn Seung-eon;Kim Ki-hwan;Kang Bo-soo
分类号 H01L29/76;H01L23/498;G11C5/02;G11C5/04;G11C5/06;H01L23/48;H01L25/18 主分类号 H01L29/76
代理机构 Harness, Dickey & Pierce, P.L.C. 代理人 Harness, Dickey & Pierce, P.L.C.
主权项 1. A method of manufacturing a semiconductor device, the method comprising: forming a first memory array on a first substrate; forming a peripheral circuit on a second substrate; wherein the peripheral circuit is for the first memory array, and no memory array is provided on the second substrate; and electrically connecting the first memory array and the peripheral circuit, wherein a surface of the first substrate on which the memory array is formed and a surface of the second substrate on which the peripheral circuit is formed face each other.
地址 Gyeonggi-do KR
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