Semiconductor light emitting apparatus having stacked reflective dielectric films

摘要

A method for manufacturing a semiconductor light emitting apparatus having first semiconductor layer and second semiconductor layer sandwiching a light emitting layer, first and second electrodes provided on respective major surfaces of the first semiconductor and second semiconductor layers to connect thereto, stacked dielectric films having different refractive indexes provided on portions of the major surfaces not covered by the first and second electrodes, and a protruding portion erected on at least a portion of a rim of at least one of the first and second electrodes. The mounting member includes a connection member connected to at least one of the first and second electrodes. The method includes causing the semiconductor light emitting device and a mounting member to face each other, and causing the connection member to contact and join to the at least one of the first and second electrodes using the protruding portion as a guide.

主权项

1. A semiconductor light emitting apparatus comprising:
a semiconductor light emitting device including:
a stacked structure unit including a first semiconductor layer, a second semiconductor layer, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer;a first electrode provided on a major surface of the stacked structure unit to connect to the first semiconductor layer;a second electrode provided on the major surface of the stacked structure unit to connect to the second semiconductor layer;a dielectric stacked film provided on the first semiconductor layer and the second semiconductor layer of the major surface not covered by the first electrode and the second electrode, formed of stacked dielectric films; anda conductive guide film provided on at least one of a first position on the first electrode not covered by the dielectric stacked film, a second position on the second electrode not covered by the dielectric stacked film, a third position on a first upper face of the dielectric stacked film on a peripheral portion of the first electrode, a fourth position on a second upper face of the dielectric stacked film on a peripheral portion of the second electrode, and a fifth position on a side faces of the dielectric stacked film.