发明名称 Middle of line structures
摘要 A contact structure includes a permanent antireflection coating formed on a substrate having contact pads. A patterned dielectric layer is formed on the antireflective coating. The patterned dielectric layer and the permanent antireflective coating form openings. The openings correspond with locations of the contact pads. Contact structures are formed in the openings to make electrical contact with the contacts pads such that the patterned dielectric layer and the permanent antireflective coating each have a conductively filled region forming the contact structures.
申请公布号 US8890318(B2) 申请公布日期 2014.11.18
申请号 US201113088110 申请日期 2011.04.15
申请人 International Business Machines Corporation 发明人 Lin Qinghuang;Zhang Ying
分类号 H01L23/48;H01L23/52;H01L29/40;H01L21/768;H01L21/311;H01L21/3105;H01L21/283;H01L21/027 主分类号 H01L23/48
代理机构 Tutunjian & Bitetto, P.C. 代理人 Tutunjian & Bitetto, P.C. ;Percello Louis
主权项 1. A contact structure, comprising: a patterned permanent antireflection coating formed directly on device formed on a substrate, said device having one or more contact pads; at least one patterned dielectric layer formed on the permanent antireflective coating, the at least one patterned dielectric layer and the permanent antireflective coating forming openings therein, the openings corresponding with locations of the contact pads; a barrier layer formed in the openings that includes a conductive catalyst; and conductive contact structures comprising carbon formed in the openings to make electrical contact with the contact pads such that the at least one patterned dielectric layer and the permanent antireflective coating each have a conductively filled region forming the contact structures, wherein the at least one patterned dielectric layer is a cured product of a dielectric composition comprising a polymer, copolymer, or a blend including at least two of any combination of polymers and/or copolymers; and wherein the openings in the at least patterned dielectric layer are formed by direct photo patterning of the dielectric composition prior to its curing.
地址 Armonk NY US