Closed cell trenched power semiconductor structure

摘要

A closed cell trenched power semiconductor structure is provided. The closed cell trenched power semiconductor structure has a substrate and cells. The cells are arranged on the substrate in an array. Every cell has a body and a trenched gate. The trenched gate surrounds the body. A side wall of the trenched gate facing body has a concave.

主权项

1. A closed-cell trenched power semiconductor device, comprising:a base; anda plurality of unit cells, arrayed on the base, and each of the unit cell including:
a body region; and a trenched gate, surrounding the body region;
wherein the trenched gate has at least an inner sidewall, the inner sidewall collapses inwardly to define at least a concave portion facing toward the body region.