Methods of forming conductive structures using a sacrificial liner layer

摘要

One illustrative method disclosed herein includes performing a first etching process to define a via opening in a layer of insulating material, performing at least one process operation to form a sacrificial liner layer on the sidewalls of the via opening, performing a second etching process to define a trench in the layer of insulating material, wherein the sacrificial liner layer is exposed to the second etching process, after performing the second etching process, performing a third etching process to remove the sacrificial liner layer and, after performing the third etching process, forming a conductive structure in at least the via opening and the trench.

主权项

1. A method, comprising:
performing a first etching process to define a via opening in a layer of insulating material, said via opening having sidewalls; performing at least one process operation to form a sacrificial liner layer on said sidewalls of said via opening, wherein said sacrificial liner layer has a thickness that falls within the range of 1-5 nm; performing a second etching process on said layer of insulating material to define a trench in said layer of insulating material, wherein said sacrificial liner layer is exposed to said second etching process; after performing said second etching process, performing a third etching process to remove said sacrificial liner layer; and after performing said third etching process, forming a conductive structure in at least said via opening and said trench.