Semiconductor device and method for fabricating semiconductor buried layer

摘要

The present disclosure provides a semiconductor device and a method for fabricating a semiconductor buried layer. The method includes: preparing a substrate which includes a first oxide layer; forming a first buried layer region in the surface of the substrate by using a photoresist layer with a first buried layer region pattern as a mask, in which a doping state of the first buried layer region is different from a doping state of other region of the substrate; forming a second oxide layer on the surface of the substrate and the first buried layer region; and forming a second buried layer region in the surface of the substrate through self alignment process by using the second oxide layer as a mask. The method disclosed by the present disclosure reduces the complexity of the buried layer procedures and the cost thereof, as well as the probability of crystal defects.

主权项

1. A method for fabricating a semiconductor buried layer, comprising:
providing a substrate which includes a first oxide layer formed thereon; forming a first buried layer region in a surface of the substrate by using process including:
forming a photoresist layer on the first oxide layer, the photoresist having a first buried layer region pattern that exposes a portion of the first oxide layer;by doping using the photoresist layer as a mask, forming the first buried layer region covered by the exposed portion of the first oxide layer, wherein a doping state of the first buried layer region is different from a doping state of other region of the substrate; andremoving the photoresist layer; forming a second oxide layer on the surface of the substrate and the first buried layer region, the second oxide layer having a first region covering the first buried layer region and a second region covering a portion of the substrate different from the first buried layer region, a thickness of the first region being greater than a thickness of the second region; and forming a second buried layer region in the surface of the substrate and covered by the second region of the second oxide layer, through a self alignment process by doping using the second oxide layer as the mask.