AC-driven high electron mobility transistor devices

摘要

A high performance high-electron mobility transistor (HEMT) design and methods of manufacturing the same are provided. This design introduces a bias layer in to the HEMT allowing the transistor to be fed with alternating current (AC) alone without the need for a negative direct current (DC) bias power supply.

主权项

1. A high electron mobility transistor (HEMT) comprising:
a transport layer comprising a first material having a first bandgap; a barrier layer comprising a second material disposed directly on the transport layer, the second material having a second bandgap that is different from the first bandgap, wherein a bandgap difference between the first and second bandgaps results in a quantum well in a conduction band along an interface between the first and second materials; and a bias layer disposed under a portion of the transport layer and configured to be coupled to a first non-biased alternating current (AC) signal that allows operation of the HEMT without applying a direct current (DC) bias to a gate node of the HEMT.