发明名称 Systems and methods for fabricating semiconductor device structures using different metrology tools
摘要 Methods and systems are provided for fabricating and measuring physical features of a semiconductor device structure. An exemplary method of fabricating a semiconductor device structure involves obtaining a first measurement of a first attribute of the semiconductor device structure from a first metrology tool, obtaining process information pertaining to fabrication of one or more features of the semiconductor device structure by a first processing tool, and determining an adjusted measurement for the first attribute based at least in part on the first measurement in a manner that is influenced by the process information.
申请公布号 US8892237(B2) 申请公布日期 2014.11.18
申请号 US201313841919 申请日期 2013.03.15
申请人 GLOBALFOUNDRIES, Inc. 发明人 Vaid Alok;Hartig Carsten
分类号 G06F19/00;H01L21/66;G01D21/00;H01L21/67;H01L21/02 主分类号 G06F19/00
代理机构 Ingrassia Fisher & Lorenz, P.C. 代理人 Ingrassia Fisher & Lorenz, P.C.
主权项 1. A system for fabricating a semiconductor device structure, the system comprising: a first processing tool configured to fabricate a feature of the semiconductor device structure; a first metrology tool configured to obtain a first measurement of an attribute of the semiconductor device structure; and a computing device coupled to the first metrology tool and configured to obtain process information pertaining to the fabrication of the feature of the semiconductor device structure by the first processing tool and determine a second measurement of the attribute based at least in part on the first measurement in a manner that is influenced by the process information such that the second measurement has improved accuracy over the first measurement of the attribute of the semiconductor device structure.
地址 Grand Cayman KY