Pseudo-NOR cell for ternary content addressable memory

摘要

A method within a ternary content addressable memory (TCAM) includes receiving a match line output from a previous TCAM stage at a gate of a pull-up transistor of a current TCAM stage and at a gate of a pull-down transistor of the current TCAM stage. The method sets a match line bar at the current TCAM stage to a low value, via the pull-down transistor, when the match line output from the previous TCAM stage indicates a mismatch. The method also sets the match line bar at the current TCAM stage to a high value, via the pull-up transistor, when the match line output from the previous TCAM stage indicates a match.

主权项

1. A method within a ternary content addressable memory (TCAM), the method comprising:
receiving a first match line output from a previous TCAM stage at a gate of a pull-up transistor of a current TCAM stage; receiving the first match line output at a gate of a pull-down transistor of the current TCAM stage; setting a match line bar at the current TCAM stage to a low value, via the pull-down transistor, when the first match line output indicates a mismatch; and setting the match line bar at the current TCAM stage to a high value, via the pull-up transistor, when the first match line output indicates a match.