| 发明名称 | Semiconductor device and method for manufacturing the same | ||
| 摘要 | The present invention discloses a semiconductor device, comprising: a substrate, a gate stack structure on the substrate, source and drain regions in the substrate on both sides of the gate stack structure, and a channel region between the source and drain regions in the substrate, characterized in that at least one of the source and drain regions comprises a GeSn alloy. In accordance with the semiconductor device and method for manufacturing the same of the present invention, GeSn stressed source and drain regions with high concentration of Sn is formed by implanting precursors and performing a laser rapid annealing, thus the device carrier mobility of the channel region is effectively enhanced and the device drive capability is further improved. | ||
| 申请公布号 | US8889519(B2) | 申请公布日期 | 2014.11.18 |
| 申请号 | US201213812499 | 申请日期 | 2012.10.12 |
| 申请人 | The institute of Microelectronics Chinese Academy of Science | 发明人 | Ma Xiaolong;Yin Huaxiang;Fu Zuozhen |
| 分类号 | H01L21/336;H01L29/66;H01L29/78;H01L29/161;H01L21/02;H01L21/265;H01L29/10;H01L29/165;H01L21/268;H01L29/51 | 主分类号 | H01L21/336 |
| 代理机构 | Treasure IP Group | 代理人 | Treasure IP Group |
| 主权项 | 1. A method for manufacturing a semiconductor device, comprising: forming a gate stack structure on a substrate; implanting precursors in the substrate on at least one side of the gate stack structure; and performing a laser rapid annealing such that the precursors react to produce a GeSn alloy, thereby to constitute source and drain regions, wherein the step of implanting precursors further comprises: performing a pre-amorphization ion implantation to form an amorphized region in the substrate; and implanting Sn in the amorphized region. | ||
| 地址 | Beijing CN | ||