Semiconductor devices and methods of manufacture thereof

摘要

Semiconductor devices and methods of manufacture thereof are disclosed. In some embodiments, a method of manufacturing a semiconductor device includes partially manufacturing a fin field effect transistor (FinFET) including a semiconductor fin comprising a first semiconductive material and a second semiconductive material disposed over the first semiconductive material. A top portion of the second semiconductive material of the semiconductor fin is removed, and a top portion of the first semiconductive material is exposed. A top portion first semiconductive material is removed from beneath the second semiconductive material. The first semiconductive material and the second semiconductive material are oxidized, forming a first oxide comprising a first thickness on the first semiconductive material and a second oxide comprising a second thickness on the second semiconductive material, the first thickness being greater than the second thickness. The second oxide is removed from the second semiconductive material, and manufacturing of the FinFET is completed.

主权项

1. A method of manufacturing a semiconductor device, the method comprising:
partially manufacturing a fin field effect transistor (FinFET) including a semiconductor fin comprising a first semiconductive material and a second semiconductive material disposed over the first semiconductive material; removing a top portion of the second semiconductive material of the semiconductor fin; exposing a top portion of the first semiconductive material; removing the top portion of the first semiconductive material from beneath the second semiconductive material; oxidizing the first semiconductive material and the second semiconductive material, wherein oxidizing the first semiconductive material and the second semiconductive material comprises forming a first oxide comprising a first thickness on the first semiconductive material and forming a second oxide comprising a second thickness on the second semiconductive material, the first thickness being greater than the second thickness; removing the second oxide from the second semiconductive material; and completing manufacturing of the FinFET.