发明名称 Optimizing lithographic processes using laser annealing techniques
摘要 Approaches for utilizing laser annealing to optimize lithographic processes such as directed self assembly (DSA) are provided. Under a typical approach, a substrate (e.g., a wafer) will be subjected to a lithographic process (e.g., having a set of stages/phases, aspects, etc.) such as DSA. Before or during such process, a set of laser annealing passes/scans will be made over the substrate to optimize one or more of the stages. In addition, the substrate could be subjected to additional processes such as hotplate annealing, etc. Still yet, in making a series of laser annealing passes, the techniques utilized and/or beam characteristics of each pass could be varied to further optimize the results.
申请公布号 US8889343(B2) 申请公布日期 2014.11.18
申请号 US201213726732 申请日期 2012.12.26
申请人 GLOBALFOUNDRIES Inc. 发明人 Preil Moshe E;Schmid Gerard M.;Farrell Richard A.;Xu Ji;Wallow Thomas I.
分类号 G03F7/26;G03F7/20 主分类号 G03F7/26
代理机构 Keohane & D'Alessandro, PLLC 代理人 Webb Hunter E.;Keohane & D'Alessandro, PLLC
主权项 1. A method for optimizing a lithographic process, comprising: subjecting a substrate to a lithographic process having a set of stages, the lithographic process comprising a directed self assembly (DSA) process; and applying a set of laser annealing passes to the substrate to optimize at least one of the set of stages, the set of laser annealing passes comprising: a first laser annealing pass to optimize a phase separation stage of the DSA process; anda second laser annealing pass to facilitate a set of chemical reactions occurring pursuant to the DSA process,wherein the first laser annealing pass is applied via a first technique and the second laser annealing pass is applied via a second technique.
地址 Grand Cayman KY