发明名称 |
Film forming method, film forming apparatus and pattern forming method |
摘要 |
Such a film forming method is provided that can prevent peeling of surface films including a resist film from a substrate during immersion exposure.;The film forming method includes the steps of forming surface films including a resist film and a protective film covering the resist film over a surface of a wafer, and forming an edge cap film by supplying an edge cap film material to at least a boundary portion including a periphery of the wafer and peripheries of the surface films such as the protective film. |
申请公布号 |
US8889337(B2) |
申请公布日期 |
2014.11.18 |
申请号 |
US200711934308 |
申请日期 |
2007.11.02 |
申请人 |
Tokyo Electron Limited |
发明人 |
Kosugi Hitoshi;Yamamoto Taro;Yamada Yoshiaki;Saiga Yasuhito |
分类号 |
G03F7/09;B05C11/02;G03F7/20;G03F7/11;H01L21/67 |
主分类号 |
G03F7/09 |
代理机构 |
Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P. |
代理人 |
Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P. |
主权项 |
1. A film forming method for forming, on a substrate, a film used for immersion exposure processing of applying exposure processing through a liquid, comprising the steps of:
forming an anti-reflection film on a surface of said substrate; forming a photoresist film on a surface of said anti-reflection film; removing excess photoresist on a circumferential periphery of the photoresist film surface; rotating the substrate with the anti-reflection film thereon, at a predetermined speed to perform a hardening process using ultraviolet rays that exposes a circumferential periphery of the anti-reflection film on the substrate to the ultraviolet rays so as to allow the anti-reflection film to be substantially uniformly hardened only at the circumferential periphery of said anti-reflection film; heating the substrate to harden a surface film, the surface film including each of said anti-reflection film and said photoresist film; supplying an edge cap peripheral film forming material, configured of a resist material having a photosensitive base removed therefrom, in a liquid state to the rotating substrate, the material, excluding a portion thereof located at an edge of the substrate, is removed using a solvent, to form an edge cap peripheral film only on a circumferential periphery of the surface film and on a boundary portion of the substrate located between a periphery of said substrate and the periphery of the surface film; and hardening said edge cap peripheral film. |
地址 |
Tokyo JP |