Memristive device based on current modulation by trapped charges

摘要

A memristive device includes a first electrode; a second electrode; a junction between the first electrode and the second electrode, the junction including a semiconductor matrix and particles embedded in the semiconductor matrix, the particles being configured to hold a selectable level of electrical charge, the electrical charge controlling the amount of current flowing through the junction for a given reading voltage. A method for using a memristive device includes: applying a first voltage across a memristive junction, the memristive junction including a semiconductor matrix and particles embedded in the semiconductor matrix; electrical charges introduced into the semiconductor matrix by the first programming voltage being trapped within the particles; applying a reading voltage across the memristive junction; and measuring a current across the junction, the current being reduced proportionally to the electrical charges trapped within the potential wells, the current being used to determine a state of the junction.

主权项

1. A memristive device comprising:
a first electrode; a second electrode; and a junction, said junction being interposed between said first electrode and said second electrode, said junction comprising:
a semiconductor matrix; andparticles embedded in said semiconductor matrix, said particles each comprising a potential well configured to hold a selectable level of electrical charge, wherein a quantity of said particles in said semiconductor matrix is sufficient that said electrical charge held in said particles governs and promotes a uniform electrical resistance of a path between said first and second electrodes through said semiconductor matrix, and an amount of current flowing through said junction for a given reading voltage, wherein said quantity of particles is configured such that a programming voltage applied will set the electrical resistance of said path, which resistance will remain unchanged in response to the reading voltage less than the programming voltage and will remain unchanged until said electrical charge is discharged or a second, greater programming voltage is applied.