| 发明名称 | Real-time on-chip EM performance monitoring | ||
| 摘要 | An integrated circuit, testing structure, and method for monitoring electro-migration (EM) performance. A method is described that includes method for measuring on-chip electro-migration (EM) performance, including: providing a first on-chip sensor continuously powered with a stress current; providing a second on-chip sensor that is powered only during measurement cycles with a nominal current; obtaining a first resistance measurement from the first on-chip sensor and a second resistance measurement from the second on-chip sensor during each of a series of measurement cycles; and processing the first and second resistance measurements. | ||
| 申请公布号 | US8890556(B2) | 申请公布日期 | 2014.11.18 |
| 申请号 | US201113282090 | 申请日期 | 2011.10.26 |
| 申请人 | International Business Machines Corporation | 发明人 | Chen Fen;Dufresne Roger A.;Feng Kai D.;St-Pierre Richard J. |
| 分类号 | G01R31/3187;G01R31/30 | 主分类号 | G01R31/3187 |
| 代理机构 | Hoffman Warnick LLC | 代理人 | Cain David A.;Hoffman Warnick LLC |
| 主权项 | 1. A method for measuring on-chip electro-migration (EM) performance of an integrated circuit, comprising: providing a first on-chip sensor continuously powered with a first current; providing a second on-chip sensor that is powered only during measurement cycles with a second current, wherein the first current is greater than the second current; obtaining a first resistance measurement from the first on-chip sensor and a second resistance measurement from the second on-chip sensor during each of a series of measurement cycles; and processing the first and second resistance measurements to monitor the EM performance of the integrated circuit. | ||
| 地址 | Armonk NY US | ||