发明名称 |
Light emitting device and lighting apparatus having the same |
摘要 |
A light emitting device includes a substrate including a plurality of convex portions, and a first semiconductor layer over the substrate. A plurality of first pits is provided in a top surface of the first semiconductor layer, and a plurality of second pits is provided in the top surface of the first semiconductor layer. A first metallic compound is provided in the first pits, and a second metallic compound is provided in the second pits. A second semiconductor layer is provided over the first semiconductor layer, and a light emitting structure is provided over the second semiconductor layer. The light emitting structure includes a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer. |
申请公布号 |
US8890200(B2) |
申请公布日期 |
2014.11.18 |
申请号 |
US201314056147 |
申请日期 |
2013.10.17 |
申请人 |
LG Innotek Co., Ltd. |
发明人 |
Lee Sun Kyun |
分类号 |
H01L33/00;H01L21/02;H01L33/20;H01L33/22 |
主分类号 |
H01L33/00 |
代理机构 |
Ked & Associates, LLP |
代理人 |
Ked & Associates, LLP |
主权项 |
1. A light emitting device comprising:
a substrate including a plurality of convex portions; a first semiconductor layer provided over top surface of the substrate; a plurality of first pits provided on a top surface of the first semiconductor layer and overlapped with the convex portions; a plurality of second pits provided on the top surface of the first semiconductor layer and disposed in regions between the convex portions; a first metallic compound provided in the first pits and contacted with upper portions of the convex portions; a second metallic compound provided in the second pits; a second semiconductor layer provided over the first semiconductor layer; and a light emitting structure provided over the second semiconductor layer, wherein the light emitting structure comprises a first conductive semiconductor layer on the second semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer. |
地址 |
Seoul KR |