| 发明名称 | Method and apparatus for producing silicon nitride film | ||
| 摘要 | Disclosed are: a method for producing a silicon nitride film, wherein generation of blisters at the periphery of a substrate is suppressed when a silicon nitride film is formed through application of a bias power; and an apparatus for producing a silicon nitride film. Specifically disclosed are a method and apparatus for producing a silicon nitride film, wherein a silicon nitride film used for a semiconductor element is formed on a substrate by plasma processing. In the method and apparatus for producing a silicon nitride film, a bias is applied to the substrate at time (b1), and a starting material gas SiH4 for the silicon nitride film is started to be supplied at time (b3) after the application of the bias. | ||
| 申请公布号 | US8889568(B2) | 申请公布日期 | 2014.11.18 |
| 申请号 | US201113638213 | 申请日期 | 2011.05.18 |
| 申请人 | Mitsubishi Heavy Industries, Ltd. | 发明人 | Nishikawa Seiji;Kafuku Hidetaka;Shimazu Tadashi |
| 分类号 | H01L21/31;H01L21/469;C23C16/505;H01L21/67;C23C16/34;H01J37/32;H01L21/02 | 主分类号 | H01L21/31 |
| 代理机构 | Westerman, Hattori, Daniels & Adrian, LLP | 代理人 | Westerman, Hattori, Daniels & Adrian, LLP |
| 主权项 | 1. A method for producing a silicon nitride film to be used in a semiconductor element by performing plasma processing to form the silicon nitride film on a substrate, comprising the step of: applying bias to the substrate after generating plasma only using an inert gas, starting supply of a raw material gas of the silicon nitride film after the application of the bias, and starting a formation of the silicon nitride film. | ||
| 地址 | Tokyo JP | ||