发明名称 |
Light emitting diode and method for fabricating the same |
摘要 |
The disclosed light emitting diode includes a substrate provided, at a surface thereof, with protrusions, a buffer layer formed over the entirety of the surface of the substrate, a first semiconductor layer formed over the buffer layer, an active layer formed on a portion of the first semiconductor layer, a second semiconductor layer formed over the active layer, a first electrode pad formed on another portion of the first semiconductor layer, except for the portion where the active layer is formed, and a second electrode pad formed on the second semiconductor layer. Each protrusion has a side surface inclined from the surface of the substrate at a first angle, and another side surface inclined from the surface of the substrate at a second angle different from the first angle. |
申请公布号 |
US8889450(B2) |
申请公布日期 |
2014.11.18 |
申请号 |
US201414219761 |
申请日期 |
2014.03.19 |
申请人 |
LG Display Co., Ltd. |
发明人 |
Son Su-Hyoung |
分类号 |
H01L21/66;H01L33/06 |
主分类号 |
H01L21/66 |
代理机构 |
Brinks Gilson & Lione |
代理人 |
Brinks Gilson & Lione |
主权项 |
1. A method for fabricating a light emitting diode, comprising:
etching a surface of a substrate, to form a plurality of protrusions; etching the protrusions such that each of the protrusions has a side surface inclined from the surface of the substrate at a first angle, and another side surface inclined from the surface of the substrate at a second angle different from the first angle; forming a plurality of nitride semiconductor layers over the protrusion-formed substrate; and forming electrode pads on at least one of the plural nitride semiconductor layers. |
地址 |
Seoul KR |