Method for forming thin film utilizing sputtering target

摘要

A semiconductor device including a highly reliable transistor formed using an oxide semiconductor is manufactured. An oxide semiconductor film is deposited by a sputtering method, using a sputtering target including an oxide semiconductor having crystallinity, and in which the direction of the c-axis of a crystal is parallel to a normal vector of the top surface of the oxide semiconductor. The target is formed by mixing raw materials so that its composition ratio can obtain a crystal structure.

主权项

1. A method of manufacturing a semiconductor device comprising the steps of:
producing sputtered particles by cleaving a target along an a-b plane of crystals of the target, the target comprising a polycrystalline oxide semiconductor material comprising indium and zinc; depositing the sputtered particles onto a surface over a substrate to form an oxide semiconductor film including a crystalline structure; and heating the oxide semiconductor film to reduce a concentration of hydrogen, wherein the crystalline structure has a c-axis being parallel to a normal vector of a surface of the oxide semiconductor film.