| 摘要 |
PROBLEM TO BE SOLVED: To provide an art of suppressing decrease in temperature detection accuracy of a temperature sense diode part in a semiconductor device where the temperature sense diode part and power semiconductor element part are provided on the same semiconductor substrate.SOLUTION: A semiconductor device 10 comprises a semiconductor substrate 11 on which a power semiconductor element part 14 and a temperature sense diode part 12 are provided. The temperature sense diode part 12 includes a first semiconductor region 50, a second semiconductor region 54, a first base region 60 and a first drift region 32a. On the semiconductor substrate 11, an isolation trench 62 which pierces the first base region 60 and extends to the first drift region 32a and surrounds a circumference of the temperature sense diode part 12 is formed. At least a part of one sidewall 62b of the isolation trench 62 contacts the power semiconductor element part 14 and the other sidewall 62a of the isolation trench 62 contacts the temperature sense diode part 12. |
