EPITAXIAL WAFER, METHOD FOR MANUFACTURING THE SAME, SEMICONDUCTOR ELEMENT, AND OPTICAL SENSOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide an epitaxial wafer and the like capable of obtaining excellent crystallinity of an epitaxial laminate and excellent surface morphology which is reflection of the crystallinity by precisely controlling an off angle and the like of a semiconductor substrate.SOLUTION: An epitaxial wafer comprises a group III-V compound semiconductor substrate, a multiquantum well structure of the group III-V compound semiconductor located on the substrate, and a surface layer of the group III-V compound semiconductor located on the multiquantum well structure. The orientation of the substrate is (100), and the off angle of the substrate is within a range of 0.00±0.03°. On a surface of the surface layer, a Root Mean Square (RMS) is less than 10 nm.