| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device that allows preventing contamination due to metal and having excellent memory characteristics, and to provide a method of manufacturing the same.SOLUTION: A nonvolatile semiconductor memory device includes a semiconductor substrate and a plurality of memory cell transistor formed on the semiconductor substrate via a gate insulating film. Each memory cell transistor includes, on the gate insulating film, a memory-cell gate electrode in which a floating gate electrode having a first conductive film, an inter-electrode insulating film, a control gate electrode including a stack of a second conductive film and a metal film, and a first insulating film are sequentially stacked. The nonvolatile semiconductor memory device further includes a second insulating film having a side-wall film provided so as to cover at least side surfaces of the metal film and covering the memory-cell gate electrode and the side-wall film. |
