SPUTTERING TARGET, OXIDE SEMICONDUCTOR THIN FILM, AND THIN FILM TRANSISTOR INCLUDING OXIDE SEMICONDUCTOR THIN FILM

摘要

PROBLEM TO BE SOLVED: To provide a high-density sputtering target.SOLUTION: A sputtering target comprises an oxide containing an indium element (In), a gallium element (Ga), a zinc element (Zn) and an aluminum element (Al), and includes one or more homologous structure compounds represented by InGaO(ZnO)or InAlO(ZnO)(m is 0.1-10), and one or more spinel structure compounds represented by ZnAlOor ZnGaO.