| 摘要 |
PROBLEM TO BE SOLVED: To provide a charged particle beam lithography device and a charged particle beam lithography method capable of enhancing the drawing accuracy by reducing the in-plane temperature difference of a sample.SOLUTION: An electron beam lithography device includes a load lock chamber provided for introducing a sample 21 externally, and capable of switching between atmospheric state and vacuum state, a transfer chamber communicable with the load lock chamber and transferring the sample 21, a constant temperature chamber 17 communicable with the transfer chamber, and having a temperature control container 19 for housing the sample 21 and controlling the temperature of the sample 21 by radiation, and a temperature control section 22 for controlling the temperature of the temperature control container 19, and a drawing chamber communicable with the transfer chamber, and performing the drawing of the sample 21 subjected to temperature uniformization. |
