发明名称 |
QUASI-OMNIDIRECTIONAL ANTI-REFLECTIVE STRUCTURE BASED ON POROUS SILICON DIELECTRIC MULTILAYERS FOR THE NEAR INFRARED, VISIBLE AND MIDDLE ULTRAVIOLET REGION OF THE ELECTROMAGNETIC SPECTRUM. |
摘要 |
<p>The invention relates to an antireflective structure based on porous silicon multilayers stacked in a one-dimensional manner. This layer can reflect less than 4% of incident light at any angle, i.e. it is not dependent on the position in which it is oriented. This is achieved for a wavelength range from 200 nm to 2000 nm and with a total physical thickness of only 510 nm. The structure comprises 51 layers having gradual porosity values ranging from 92 to 38 %. The length of each layer is constant and equal to 10 nm and the profile of the refractive index varies by means of a monotonically increasing envelope function of the form f(z)=n 0 +(n F -n 0 )(z/L) k, with z the depth of the layer. The device is made using electrochemical anodization in an electrolytic solution of hydrofluoric acid and ethanol, attacking silicon wafers in a galvanostatic manner in a controlled interface.</p> |
申请公布号 |
MX2013005576(A) |
申请公布日期 |
2014.11.17 |
申请号 |
MX20130005576 |
申请日期 |
2013.05.17 |
申请人 |
UNIVERSIDAD AUTÓNOMA DEL ESTADO DE MORELOS |
发明人 |
AUGUSTO DAVID ARIZA FLORES;JOSE SAMUEL PEREZ HUERTA;YOGESH KUMAR;AGARWAL, VIVECHANA |
分类号 |
G02B6/036;C25D1/06 |
主分类号 |
G02B6/036 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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