| 摘要 |
PROBLEM TO BE SOLVED: To provide a slurry composition used for chemical mechanical polishing (CMP) and a substrate polishing method.SOLUTION: The present invention relates to a slurry composition containing a polishing material and a water soluble polymer. The slurry composition contains a soluble polymer, which has a solubility parameter of 9.0-14.0 and contains a hetero atom, with an added amount that lowers a polishing rate in the vicinity of an edge part of a substrate to be polished to a level below an average polishing rate on the substrate to be polished, the edge part being defined as a region within 1 mm from the outermost edge of the substrate to be polished. The water soluble polymer may have an average molecular weight in the range from 200 to approximately 3 million, and when the water soluble polymer has an SP value of 9.5 or less and contains a hetero atom in a main chain structure, the water soluble polymer may have an average molecular weight in the range from 200 to 110,000. |
