NITRIDE SEMICONDUCTOR SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide a nitride semiconductor substrate which inhibits the occurrence of warpage of or cracks in a substrate when a thick film nitride semiconductor layer is formed on an Si substrate and which is suitable for a high-voltage power device.SOLUTION: Manufactured is a nitride semiconductor substrate 1 in which a buffer layer 3 and a semiconductor operation layer 4 which are composed of a group 13 nitride are sequentially laminated on one principal surface of an Si single crystal substrate. The one principal surface of the Si single crystal substrate 2 has an off angle of 0.1-1° or -1--0.1° with respect to (111) plane; and an average dopant concentration of a bulk is 1×10-1×10cm; and the Si single crystal substrate has an SiOfilm on a rear face. A total thickness of the buffer layer 3 and the semiconductor operation layer 4 is 4-10 μm.