FIELD EFFECT SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

摘要

PROBLEM TO BE SOLVED: To connect a contact plug and a metal source-drain electrode reliably, while suppressing junction leakage or increase in resistance.SOLUTION: A field effect semiconductor device having a metal S/D structure includes a semiconductor substrate 10, a gate electrode 13 formed on the substrate 10 via a gate insulating film 12, a source-drain electrode 20 formed on the surface of the substrate 10 across a channel region under the gate electrode 13 and composed of an alloy of a semiconductor composing the substrate 10 and a meal, and a contact plug 30 coming into contact with the source-drain electrode 20. The interface of the source-drain electrode 20 in a region 22 directly under the contact plug and the substrate 10 exists at a position deeper to the substrate side than the interface of the source-drain electrode 20 in other region 21 and the substrate 10.