发明名称 METHOD OF TRANSFERRING GRAPHENE, METHOD OF MANUFACTURING DEVICE USING THE SAME AND SUBSTRATE STRUCTURE INCLUDING GRAPHENE
摘要 <p>Disclosed are a method of transferring graphene, a method of manufacturing device using the same, and a substrate structure including graphene. The method of transferring graphene can include a step of forming a protection layer (metal layer) on a graphene layer formed in a first substrate, transferring the graphene layer and the protection layer (metal layer) to a preset support unit, and transferring the graphene layer and the protection layer (metal layer) from the support body to a second substrate. The size of the protection layer can be larger than that of graphene layer. A part of the graphene layer which is not covered with the protection layer can be attached to the support unit. The size of the support unit can be larger than that of the first and/or second substrate. The first and/or second substrate can be a substrate of wafer level/scale.</p>
申请公布号 KR20140132230(A) 申请公布日期 2014.11.17
申请号 KR20130051500 申请日期 2013.05.07
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE, JOO HO;KIM, YONG SUNG;MOON, CHANG YOUL;LEE, SUNG HEE;LEE, CHANG SEUNG
分类号 H01L21/20;H01L21/336;H01L29/78 主分类号 H01L21/20
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