| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a nitride semiconductor laser element capable of obtaining sufficient reliability even with high temperature high output driving.SOLUTION: A nitride semiconductor laser element 100 has a configuration including: a coat film 114, formed at an optical emission part, containing an aluminum nitride crystal or an aluminum acid nitride crystal; and a DLC film 115, formed at an opposite side of the optical emission part of the coat film 114, containing diamond-like carbon.</p> |
