发明名称 PROCESSING METHOD FOR SUBSTRATE WITH PATTERN AND PROCESSING APPARATUS FOR SUBSTRATE WITH PATTERN
摘要 PROBLEM TO BE SOLVED: To provide a processing method capable of decreasing the number of formation of processing traces than before, without causing failure in dividing a substrate with a pattern.SOLUTION: In a method of processing a substrate with a pattern in which a plurality of unit patterns are repeatedly arranged in two-dimension on a single crystal substrate, a division start point formation step for forming a division start point on the substrate by radiating laser light along a processing scheduled line set on the substrate includes a crack extension processing step in which, by radiating laser light while scanning along the processing scheduled line, processing traces formed on the substrate with a pattern by respective unit pulse lights of the laser light are positioned in a discrete manner along the processing schedule line, with a crack extending from respective processing traces to the substrate with a pattern. In the division start point formation step, the crack extension processing step is intermittently performed along the processing scheduled line so that a first region in which the processing traces are formed with constant intervals and a second region in which no processing trace is formed are alternately formed.
申请公布号 JP2014216556(A) 申请公布日期 2014.11.17
申请号 JP20130094326 申请日期 2013.04.26
申请人 MITSUBOSHI DIAMOND INDUSTRIAL CO LTD 发明人 KIYAMA NAOYA
分类号 H01L21/301;B23K26/38;B23K26/40 主分类号 H01L21/301
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