SILICON CARBIDE SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method of a silicon carbide semiconductor device having an electrode which can achieve low contact resistance against both of a p-type region and an n-type region of a silicon carbide layer.SOLUTION: A silicon carbide semiconductor device manufacturing method comprises: preparing a silicon carbide layer 10 which has a principal surface 10a and includes a p-type region 18 and an n-type region 14 contacting the p-type region 18; forming a metal layer 16 which contacts the p-type region 18 and the n-type region 14 on the principal surface 10a; and annealing the p-type region 18, the n-type region 14 and the metal layer 16. The process of forming the metal layer 16 includes a process of forming a first region 16a which contacts the p-type region 18 and the n-type region 14 on the principal surface 10a, and a process of forming a second region 16b arranged in contact with a surface 16a5 opposite to a surface 16a4 of the first region 16a, which contacts the principal surface 10a. The first region 16a has an aluminum element and a silicon element. The second region 16b has a titanium element.