| 摘要 |
PROBLEM TO BE SOLVED: To provide a photovoltaic power generation element having a high output and excellent power generation efficiency.SOLUTION: A photovoltaic power generation element 10 having one side used as a light-incident surface includes an n-type crystal semiconductor substrate 11, an n-type amorphous semiconductor thin film 13 laminated on one side of the n-type crystal semiconductor substrate 11, and a p-type amorphous semiconductor thin film 16 laminated on the other side of the n-type crystal semiconductor substrate 11. An n-type amorphous semiconductor composing the n-type amorphous semiconductor thin film 13 is an n-type amorphous silicon carbide SiC(0.05≤x≤0.25). |
