发明名称 SEMICONDUCTING NANOPARTICLES WITH SURFACE MODIFICATION
摘要 <p>The invention relates to semiconducting nanoparticles. The nanoparticles of the invention comprise a single element or a compound of elements in one or more of groups II, III, IV, V, VI. The nanoparticles have a size in the range of 1 nm to 500 nm, and comprise from 0.1 to 20 atomic percent of oxygen or hydrogen. The nanoparticles are typically formed by comminution of bulk high purity silicon. One application of the nanoparticles is in the preparation of inks which can be used to define active layers or structures of semiconductor devices by simple printing methods.</p>
申请公布号 KR101462435(B1) 申请公布日期 2014.11.17
申请号 KR20087000378 申请日期 2006.06.29
申请人 发明人
分类号 B82B3/00;C30B29/06;C30B29/60;H01L29/772 主分类号 B82B3/00
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