| 摘要 |
<p>The present invention relates to a chemical vapor deposition apparatus. More specifically, the chemical vapor deposition apparatus can grow a deposited film on a seed. The apparatus includes: a reaction vessel in which chemical reaction of raw gas is performed; an gas injection part which is formed on a lower part of the reaction vessel and injects the raw gas; a gas discharging part which is formed on an upper part of the reaction vessel and discharges cluster and the raw gas that are not deposited on the seed; a seed holder which is installed in the reaction vessel and fixates the seed; and a gas flow control part installed between the gas injection part and the seed holder. The gas flow control part is formed in the shape of a small pipe, which has an inner diameter of an outlet close to the seed holder is smaller than an inner diameter of an inlet close to the gas injection part. Therefore, the raw gas, injected from the gas injection part, and the cluster are gathered to the seed.</p> |
