SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND INFORMATION PROCESSING DEVICE

摘要

PROBLEM TO BE SOLVED: To inhibit a short circuit between adjacent interconnections.SOLUTION: A manufacturing method of a semiconductor device having interconnections having a structure in which a metal layer and metal compound films are laminated comprises: a first spattering process of forming the metal layer; and a second spattering process of forming the metal compound films, in which the first spattering process and the second spattering process are performed in the same processing chamber PRC. An information processing device DPD compares a processing condition when the second spattering process is performed and a processing condition when the second spattering process is performed on the previous substrate SUB every time the processing on the substrate SUB in a processing chamber PRC4 is performed. And when a pressure inside the processing chamber PRC4 decreases by a first reference value or over and an input voltage increases by a second reference value or more, the information processing device performs notice processing.