SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device and a method of manufacturing the same, capable of sufficiently exhibiting a recovery effect by hydrogen annealing without reducing the reliability of a wiring layer.SOLUTION: A method of manufacturing a semiconductor device includes the following steps of: introducing a sputter gas into a chamber where a Ti target is arranged to sputter a Ti target in a state that a processing target substrate is not carried in the chamber; introducing a sputter gas containing a nitrogen gas into the chamber to sputter the Ti target and deposit a first TiN film on the substrate after carrying the substrate in the chamber; depositing an Al alloy film on the first TiN film after carrying the substrate out from the chamber; depositing a second TiN film on the Al alloy film; and patterning the second TiN film, the Al alloy film, and the first TiN film to form a wiring layer.