| 发明名称 |
LINEARLY RELATED THRESHOLD VOLTAGE OFFSETS |
| 摘要 |
Threshold voltage offsets for threshold voltages are determined. The threshold voltage offsets may be linearly related by a non-zero slope. The threshold voltages are shifted using their respective threshold voltage offsets. The threshold voltages that are shifted by their respective threshold voltage offsets are used to read data from multi-level memory cells. |
| 申请公布号 |
US2014334228(A1) |
申请公布日期 |
2014.11.13 |
| 申请号 |
US201313892731 |
申请日期 |
2013.05.13 |
| 申请人 |
SEAGATE TECHNOLOGY LLC |
发明人 |
Kim Young-Pil;Bowman Rodney Virgil |
| 分类号 |
G11C29/08;G11C16/26 |
主分类号 |
G11C29/08 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for use with multi-level memory cells, comprising:
determining threshold voltage offsets for threshold voltages, the threshold voltage offsets being linearly related by a non-zero slope; shifting threshold voltages using their respective threshold voltage offsets; and using the threshold voltages shifted by their respective threshold voltage offsets to read data from the multi-level memory cells. |
| 地址 |
Cupertino CA US |
