| 发明名称 |
DIRECT AND SEQUENTIAL FORMATION OF MONOLAYERS OF BORON NITRIDE AND GRAPHENE ON SUBSTRATES |
| 摘要 |
<p>The invention generally related to a method for preparing a layer of graphene directly on the surface of a substrate, such as a semiconductor substrate. The layer of graphene may be formed in direct contact with the surface of the substrate, or an intervening layer of a material may be formed between the substrate surface and the graphene layer.</p> |
| 申请公布号 |
WO2014182540(A1) |
申请公布日期 |
2014.11.13 |
| 申请号 |
WO2014US36405 |
申请日期 |
2014.05.01 |
| 申请人 |
SUNEDISON SEMICONDUCTOR PTE. LTD.;KANSAS STATE UNIVERSITY RESEARCH FOUNDATION |
发明人 |
SEACRIST, MICHAEL R.;BERRY, VIKAS;NGUYEN, PHONG T. |
| 分类号 |
H01L21/314;C01B31/04 |
主分类号 |
H01L21/314 |
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