CURRENT PERPENDICULAR TO PLANE MAGNETORESISTIVE SENSOR EMPLOYING HALF METAL ALLOYS FOR IMPROVED SENSOR PERFORMANCE

摘要

A magnetoresistive sensor having employing a Mn containing Huesler alloy for improved magnetoresistive performance in a structure that minimizes corrosion and Mn migration. The sensor can be constructed with a pinned layer structure that includes a lamination of layers of Co2MnX and CoFe, where X is Al, Ge or Si. The Co2MnX can be sandwiched between the layers of CoFe to prevent Mn migration into the spacer/barrier layer. The free layer can also be constructed as a lamination of Co2MnX and CoFe layers, and may also be constructed so that the Co2MnX layer is sandwiched between CoFe layers to prevent Mn migration.

主权项

1. A magnetoresistive sensor, comprising:
a magnetic free layer structure; a magnetic pinned layer structure comprising a lamination of layers of a material selected from the group consisting of Co2[Mn1−xCrx]Si, Co2[Mn1−xCrx]Al or Co2[Mn1−xCrx]Ge; and a non-magnetic layer sandwiched between the free layer structure and the pinned layer structure.