METAL-OXIDE-SEMICONDUCTOR (MOS) VOLTAGE DIVIDER WITH DYNAMIC IMPEDANCE CONTROL

摘要

Metal-Oxide-Semiconductor (MOS) voltage divider with dynamic impedance control. In some embodiments, a voltage divider may include two or more voltage division cells, each voltage division cell having a plurality of Metal-Oxide-Semiconductor (MOS) transistors, a least one of the plurality of MOS transistors connected to a signal path and at least another one of the plurality of MOS transistors connected to a control path, the voltage division cell configured to provide a voltage drop across the signal path based upon a control signal applied to the control path.

主权项

1. A voltage divider, comprising:
a voltage division cell including:
a first N-type Metal-Oxide-Semiconductor (NMOS) transistor;a first P-type (PMOS) transistor coupled in series with the first NMOS transistor, a source terminal of the first NMOS transistor connected to a source terminal of the first PMOS transistor, and a gate terminal of the first PMOS transistor connected to a drain terminal of the first PMOS transistor;a second NMOS transistor having a gate terminal connected to a gate terminal of the first NMOS transistor; anda second PMOS transistor coupled in series with the second NMOS transistor, a source terminal of the second NMOS transistor connected to a source terminal of the second PMOS transistor, a drain terminal of the second NMOS transistor connected to the gate terminal of the second NMOS transistor, and a gate terminal of the second PMOS transistor connected to the gate terminal of the first PMOS transistor.