| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of producing a phase shift mask which enables appropriate control of the inclination angle in an inclination region of a phase shift pattern and a phase shift mask.SOLUTION: As a film formation condition for a phase shift layer, the power density of the sputtering power in forming a film by sputtering is controlled variably so as to form an arbitrary shape of an inclination region. More specifically, the etching condition in the phase shift layer is controlled by adjusting the power density of the sputtering power in forming the phase shift layer so as to set an inclination angle of an inclined surface to one side of a glass substrate. |
