SEMICONDUCTOR MEMORY DEVICE AND SYSTEM HAVING THE SAME

摘要

A semiconductor memory device includes a first dummy transistor coupled to a bit line, a first select transistor formed where a first selection line surrounds a vertical channel layer, a second dummy transistor coupled to a common source line, a second select transistor formed where a second selection line surrounds the vertical channel layer, and main cell transistors coupled between the first and second select transistors.

主权项

1. A semiconductor memory device, comprising:
a first dummy transistor coupled to a bit line; a first select transistor coupled to the first dummy transistor; a second dummy transistor coupled to a common source line; a second select transistor coupled to the second dummy transistor; and main cell transistors coupled between the first and second select transistors.