发明名称 Reflective Lithography Masks and Systems and Methods
摘要 Various non-planar reflective lithography masks, systems using such lithography masks, and methods are disclosed. An embodiment is a lithography mask comprising a transparent substrate, a reflective material, and a reticle pattern. The transparent substrate comprises a curved surface. The reflective material adjoins the curved surface of the transparent substrate, and an interface between the reflective material and the transparent substrate is a reflective surface. The reticle pattern is on a second surface of the transparent substrate. A reflectivity of the reticle pattern is less than a reflectivity of the reflective material. Methods for forming similar lithography masks and for using similar lithography masks are disclosed.
申请公布号 US2014333914(A1) 申请公布日期 2014.11.13
申请号 US201414341443 申请日期 2014.07.25
申请人 Taiwan Semiconductor Manufacturing Company, Ltd. 发明人 Liu Chien-Hsuan;Wang Jen-Pan
分类号 G03F7/20;G03F1/52 主分类号 G03F7/20
代理机构 代理人
主权项 1. A system comprising: a first radiation source; and a first lithography mask comprising a first non-planar reflective surface and a first reticle pattern, the first lithography mask being configured to reflect radiation off of the first non-planar reflective surface in a first pattern of radiation to a substrate, the radiation being from the radiation source, the first pattern of radiation corresponding to the first reticle pattern.
地址 Hsin-Chu TW