HIGH-VOLTAGE TRANSISTOR DEVICE AND PRODUCTION METHOD

摘要

A body region (3) with a first type of electric conductivity is arranged at the upper surface (10) of a substrate (1) in a well (2), wherein a portion of the well that is not occupied by the body region has a second type of conductivity opposite the first type of conductivity. At the upper surface, a source region is arranged in the body region and a drain region is arranged in the well at a distance from the body region; the source region and the drain region both have the second type of conductivity. The body region is arranged underneath a surface area of the upper surface that has a border (7) with opposing first border sides (8). The well has a varying depth in the substrate. The depth of the well is smaller underneath the first border sides of the body region than in a portion of the body region that is spaced apart from the first border sides.

主权项

1. A high-voltage transistor device, comprising:
a semiconductor substrate with an upper surface; a doped well having a lower boundary in the semiconductor substrate, the upper surface and the lower boundary being spaced apart by distances; a body region being arranged in the well, the body region having a border with opposite first border sides and opposite second border sides at the upper surface; the body region having a first type of electric conductivity; a portion of the well that is not occupied by the body region having a second type of conductivity opposite the first type of conductivity; a source region being arranged in the body region at one of the second border sides; the source region having the second type of conductivity; a drain region arranged opposite the source region at the upper surface in the well at a distance from the body region; the drain region having the second type of conductivity; the distances between the upper surface and the lower boundary of the well being smaller at the first border sides of the body region than at the second border sides.