| 发明名称 |
STRUCTURE AND METHOD FOR REDUCING FLOATING BODY EFFECT OF SOI MOSFETS |
| 摘要 |
The present invention generally relates to a semiconductor structure and method, and more specifically, to a structure and method for reducing floating body effect of silicon on insulator (SOI) metal oxide semiconductor field effect transistors (MOSFETs). An integrated circuit (IC) structure includes an SOI substrate and at least one MOSFET formed on the SOI substrate. Additionally, the IC structure includes an asymmetrical source-drain junction in the at least one MOSFET by damaging a pn junction to reduce floating body effects of the at least one MOSFET. |
| 申请公布号 |
US2014332891(A1) |
申请公布日期 |
2014.11.13 |
| 申请号 |
US201414338876 |
申请日期 |
2014.07.23 |
| 申请人 |
International Business Machines Corporation |
发明人 |
LIANG Qingqing;LUO Zhijiong;YIN Haizhou;ZHU Huilong |
| 分类号 |
H01L27/12 |
主分类号 |
H01L27/12 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An integrated circuit (IC) structure comprising:
a silicon on insulator (SOI) substrate; at least one metal oxide semiconductor field effect transistor (MOSFET) formed on the SOI substrate; and an asymmetrical source-drain junction in the at least one MOSFET structured to reduce floating body effects of the at least one MOSFET. |
| 地址 |
Armonk NY US |
